Atomic Layer Deposition, ALD, is a type of gas source deposition technique which deposits a thin film with monolayer precision, critical for edge deposition. This self limiting “pulsed” process sequentially introduces reactants into the process chamber in the gas phase to build a successfulive monolayer of film on the substrate sample. These reactions often require the use of extremely precise doses of hazardous precursor material. Some of the applications of ALD process are development of advanced hard drives, DRAM's, storage capacitors, TFEL displays (phosphorescent layer), solar cells, MEMS, OLEDs.